#11. Materials for microelectronics: manufacturing process, implantation and reliability, from atomic scale to industrial design.
- Anne HEMERYCK, LAAS-CNRS, France (email@example.com)
- Layla MARTIN SAMOS, CNR-IOM, Italy
- Normand MOUSSEAU, U. Montréal, Canada
- Lourdes PELAZ, U. Valladolid, Spain
- Nicolas RICHARD, CEA, France
DescriptionThis symposium will bring together researchers working on materials for microelectronics. It will focus on theory, simulations and experiments for manufacturing process, implantation and reliability and how modeling and simulations can predict their impact on macroscopic properties of achieved devices. The aim of this symposium is to address those issues at different space and times scales with the additional objective to bridge scales from atomistic-to-continuum approaches in the scope of industrial applications.
At the atomistic scale, a detailed picture of the stability and of the dynamic of atomic species and their electronic properties is required. In this domain, efforts on developing advanced rare event/sampling techniques in order to reach experimental time scales and on studying electric field effects or thermal transport are important to bring knowledge at larger scales. The modeling methods used to understand these properties include (not limited): Density Functional Theory (DFT), Advanced theoretical methods beyond DFT, Molecular Dynamics (classic, ab initio, tempering…), kinetic Monte Carlo, Activation Relaxation Technique but also experimental measurements. Recent experimental advances for nanoscale measurement, among other things, have allowed for microscopic visualization of elementary defects and their characterization at the electronic level and their impact on reliability and properties in harsh environment (radiation, temperature,...). At the continuum scale, scale of interest for the industrial world, multi-physics phenomena are considered. Mass and charges transport (as for instance through Non-Equilibrium Green Functions), thermal effects and the presence of the electric fields are parameters that must be considered in the Technology Computer Aided Design (TCAD) models to be efficient and reliable. Open problems should be identified and we will discuss how atomistic tools can help for the development of novel TCAD tools. Recent advances in Machine Learning or materials discovery through enhanced sampling approaches are also provided with new routes to bridge the gap between atomistic modeling and industrial design.
Confirmed Keynote Speakers• Philippe Blaise (Sylvaco Inc, France)
• Fuccio Cristiano (LAAS-CNRS, France)
• Walter Meyer (Univ of Pretoria, South Africa)
• Clara Santato (Polytechnique Montréal, Canada)
• Alex Shluger (University College London, United Kingdom)